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儀器簡介：
美國MTI公司為半導(dǎo)體行業(yè)硅片幾何參數(shù)測(cè)量技術(shù)-電容探頭領(lǐng)域的佼佼者，與昔日的ADE齊名：為世界半導(dǎo)體業(yè)硅片幾何參數(shù)測(cè)量的標(biāo)準(zhǔn)測(cè)試設(shè)備；都同為納斯達(dá)克上市企業(yè)。
主要參數(shù)：
1. Diameter: 150mm,200mm,300mm
2. Material: All semiconducting,and semi-insulating matrrials
3.Surfaces: As-Cut, Lapped, Etched,Polished,Patterned; Bare wafer/Quartz Base,Tape
4.Thickness: (ASTM F533),Range-+/-500um;Accracy-+/-0.25um; Repeatability-0.050um
5.TTV: (ASTM F533) Range-+/-500um; Accuracy-+/-0.050um; Repeatablity-0.050um
6.Bow:(ASTM F1390) Range-+/-250um; Accuracy-+/-2.0um; Repeatabiligy-0.75um
7.Flatness(Global)(ASTM F1530) Rang:8mm; Accuracy-+/-0.05um; Repeatbility-0.030um
8.Flatness(Site)(ASTM F1530) Rang:8mm; Accuracy: +/-0.05um; Repeatbiligy:0.030um
設(shè)備：Proforma 300SA：半自動(dòng)最大12寸晶圓幾何參數(shù)測(cè)量儀；
Proforma 200SA：半自動(dòng)型最大8寸晶圓幾何參數(shù)測(cè)試儀；
測(cè)試數(shù)據(jù)/結(jié)果例子：
MaxMaxMaxMaxMaxMaxMaxMax% SitesNumberIDThicknessThicknessThicknessThicknessTTVBowBowWarpWarpSoriGBIRGF3RGFLRGBIDGF3DGFLDSBIRSF3RSFLRSFQRSBIDSF3DSFLDSFQDPassed
(uM)(uM)(uM)(uM)(uM)(uM)(uM)(uM)(uM)(uM)(uM)(uM)(uM)(uM)(uM)(uM)(uM)(uM)(uM)(uM)(uM)(uM)(uM)(uM)(uM)
Low Limit
1.00shiny side729.56729.15728.83729.650.82-0.20-2.2118.3217.7417.720.820.760.750.820.630.480.290.300.300.130.210.200.200.07100.002.00dull side729.60729.14728.77729.730.963.855.5917.3417.3217.560.960.770.770.960.640.540.320.340.340.190.260.250.250.13100.003.00shiny side729.52729.10728.77729.610.840.33-1.5516.7517.3017.270.840.750.740.840.610.480.340.330.330.130.190.190.190.09100.004.00dull side729.54729.10728.76729.680.923.295.3417.2117.2917.530.920.790.760.920.610.530.290.270.280.180.270.260.260.10100.00
Minimum729.52729.10728.76729.610.82-0.20-2.2116.7517.2917.270.820.750.740.820.610.480.290.270.280.130.190.190.190.07100.00
Maximum729.60729.15728.83729.730.963.855.5918.3217.7417.720.960.790.770.960.640.540.340.340.340.190.270.260.260.13100.00
Average729.56729.12728.78729.670.891.821.7917.4117.4117.520.890.770.760.890.620.510.310.310.310.160.230.230.230.10100.00
Std Dev0.0300.0220.0280.0440.0561.7723.6810.5730.1900.1620.0560.0150.0120.0560.0140.0250.0220.0290.0250.0250.0320.0290.0300.0210.000
200SA/300SA操作界面，3D圖形貌顯示
技術(shù)參數(shù)：
1. Diameter: 150mm,200mm,300mm
2. Material: All semiconducting,and semi-insulating matrrials
3.Surfaces: As-Cut, Lapped, Etched,Polished,Patterned; Bare wafer/Quartz Base,Tape
4.Thickness: (ASTM F533),Range-+/-500um;Accracy-+/-0.25um; Repeatability-0.050um
5.TTV: (ASTM F533) Range-+/-500um; Accuracy-+/-0.050um; Repeatablity-0.050um
6.Bow:(ASTM F1390) Range-+/-250um; Accuracy-+/-2.0um; Repeatabiligy-0.75um
7.Flatness(Global)(ASTM F1530) Rang:8mm; Accuracy-+/-0.05um; Repeatbility-0.030um
8.Flatness(Site)(ASTM F1530) Rang:8mm; Accuracy: +/-0.05um; Repeatbiligy:0.030um
主要特點(diǎn)：
1. Diameter: 150mm,200mm,300mm
2. Material: All semiconducting,and semi-insulating matrrials
3.Surfaces: As-Cut, Lapped, Etched,Polished,Patterned; Bare wafer/Quartz Base,Tape
4.Thickness: (ASTM F533),Range-+/-500um;Accracy-+/-0.25um; Repeatability-0.050um
5.TTV: (ASTM F533) Range-+/-500um; Accuracy-+/-0.050um; Repeatablity-0.050um
6.Bow:(ASTM F1390) Range-+/-250um; Accuracy-+/-2.0um; Repeatabiligy-0.75um
7.Flatness(Global)(ASTM F1530) Rang:8mm; Accuracy-+/-0.05um; Repeatbility-0.030um
8.Flatness(Site)(ASTM F1530) Rang:8mm; Accuracy: +/-0.05um; Repeatbiligy:0.030um
硅片切割
硅片切割的常見方法 目前，采用硅片切割方法有內(nèi)圓切割和自由磨粒的多線切割兩種，而固定磨粒線鋸實(shí)質(zhì)上是一種用
