General InformationCAS number220797-16-0Chemical formula(C51H61N)nMolecular weight Mw = 40 KDa (PD = 1.75)Absorption max 390 nm (in THF)Fluorescence em 295 nm, 435 nm (in THF)HOMO/LUMOHOMO = 5.3 eV, LUMO = 2.3 eVSolventsTHF, Toluene and ChloroformSynonymsPoly(9,9-dioctylfluorene-alt-N-(4-sec-butylphenyl)-diphenylamine)Classification / FamilyHole transport material (HTL), Hole injection material (HIL), Electron blocking material (EBL), OLEDs, Perovskite solar cells, Organic and printed electronicsProduct DetailsPurity 99%Melting pointn.a.ColourPale yellow powder/fibers

 

Chemical Structure

Chemical Structure of Poly(9,9-dioctylfluorene-alt-N-(4-sec-butylphenyl)-diphenylamine) (TFB); CAS No. 220797-16-0; Chemical Formula (C51H61N)n.

Applications

Poly(9,9-dioctylfluorene-alt-N-(4-sec-butylphenyl)-diphenylamine) (TFB) is a triarylamine based semiconductor with a band gap of 3 eV (HOMO and LUMO levels of 5.3 and 2.3 eV, respectively) and a relatively high hole mobility of 2 10-3 cm2 V-1 s-1.

Due to its low ionisation potential and high hole mobility, TFB serves primarily as hole transport layer (HTL), hole-injection layer (HIL) and electron-blocking layer (EBL) material in organic electronic devices. When built into device as an interface material, TFB as an electron blocking layer will not only reduce the chance of electron leakage, but also reduce the possibility of exciton quenching between the interface of the active layer and charge transport layer (F8BT/MoOx for example).

 

Device structure                    ITO (120 nm)/PDOT:PSS(50 nm)/TFB (5 nm)/PYGTPA* (75 nm)/PEGPF* (10 nm)/Ca (10 nm)/Al (100 nm) [1]ColourDeep blue Max. luminance        9,242 cd/m2Max. Current Efficiency0.85 cd/ABias4.3 V

 

Device structure                                          

ITO/c-ZnO (50 nm)/F8BT (80 nm)/MoO3 (10 nm)/Au (50 nm) [2]

ITO/c-ZnO (50 nm)/F8BT (80 nm)/TFB (60 nm)/MoO3 (10 nm)/Au (50 nm) [2]

ColourGreen Green Max. luminance    9,370 cd/m216,460 cd/m2Max. Current Efficiency0.34 cd/A0.93 cd/ABias~ 0.60 V~ 0.87 V

Device structure                                      

ITO/ZnO/CsPbI3/TFB (60 nm)/MoO3 (5 nm)/Ag (80 nm) [3]

Colour                                Red Max. Luminance206 cd/m2Max. EQE5.7%

*For chemical structure informations please refer to the cited references

 Literature and ReviewsAll-solution-processed multilayer polymer/dendrimer light emitting diodes, M. Auer-Berger et al., Org. Electronics, 35, 164-170 (2016); http://dx.doi.org/10.1016/j.orgel.2016.04.044.High Efficiency Composite metal Oxide-Polymer Electroluminescent Devices: A Morphological and Material based Investigation, D. Kabra et al., Adv. Mater., 20, 3447 3452 (2008); DOI: 10.1002/adma.200800202.Highly Efficient Perovskite Nanocrystal Light-Emitting Diodes Enabled by a Universal Crosslinking Method, G. Li et al., adv. Mater., 28, 3528 3534 (2016); DOI: 10.1002/adma.201600064.A polymer blend approach to fabricating the hole transport layer for polymer light-emitting diodes, H. Yan et al., Appl. Phys. Lett., 84, 3873 (2004); doi: 10.1063/1.1737791.Spin-cast thin semiconducting polymer interlayer for improving device efficiency of polymer light-emitting diodes, J-S. Kim et al., Appl. Phys. Lett., 87, 023506 (2005); doi: 10.1063/1.1992658.